Manufacturer Part Number
IXFN24N100F
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor designed for power electronics and RF applications
Product Features and Performance
1000V drain-to-source voltage
24A continuous drain current at 25°C
390mΩ maximum on-state resistance
6600pF maximum input capacitance
600W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
High voltage and current handling capability
Low on-state resistance for high efficiency
Suitable for high-frequency, high-power applications
Key Technical Parameters
N-channel MOSFET
±20V gate-to-source voltage
5V maximum gate threshold voltage
195nC maximum gate charge
Chassis mount package
Quality and Safety Features
SOT-227B package for reliable operation
MOSFET technology provides robust performance
Compatibility
Compatible with a wide range of power electronics and RF circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
RF power amplifiers
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose
Excellent power handling and efficiency for high-power applications
Rugged and reliable performance over a wide temperature range
Suitable for high-frequency, high-voltage power conversion and amplification
