Manufacturer Part Number
IXFN230N10
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
RoHS3 Compliant
Chassis Mount
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs Max): ±20V
Drain-Source On-Resistance (Rds On Max): 6mΩ @ 500mA, 10V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id): 230A @ 25°C (Tc)
Input Capacitance (Ciss Max): 19000pF @ 25V
Power Dissipation (Max): 700W (Tc)
N-Channel FET
Gate Threshold Voltage (Vgs(th) Max): 4V @ 8mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg Max): 570nC @ 10V
Product Advantages
High power density
Low on-resistance
High current capability
Key Technical Parameters
Voltage, current, resistance, capacitance, power, temperature
Quality and Safety Features
RoHS3 Compliant
Compatibility
Chassis Mount
Application Areas
Power electronics
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
High power density
Low on-resistance
High current capability
Suitable for various power electronics applications
