Manufacturer Part Number
IXFN210N30P3
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with low on-resistance and high power dissipation capability.
Product Features and Performance
Drain to Source Voltage (Vdss) of 300V
Extremely low on-resistance (Rds(on)) of 14.5mOhm @ 105A, 10V
Continuous Drain Current (Id) of 192A at 25°C
High Power Dissipation (Pc) of 1500W at Tc
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Speeds
Robust Packaging (SOT-227B)
Product Advantages
Excellent performance-to-cost ratio
Ideal for high-power applications
Reliable and durable design
Easy to integrate into circuits
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max) of 5V @ 8mA
Input Capacitance (Ciss) of 16200pF @ 25V
Gate Charge (Qg) of 268nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Exceptional performance and efficiency
Robust and reliable design
Versatile applications
Excellent value for the price
Backed by IXYS Corporation's expertise and reputation
