Manufacturer Part Number
IXFN180N20
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with excellent power handling capabilities.
Product Features and Performance
Drain-to-source voltage rating up to 200V
Continuous drain current of 180A at 25°C case temperature
Low on-state resistance of 10mΩ
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge for efficient power conversion
High power dissipation capability of up to 700W
Product Advantages
Excellent power handling and efficiency
Compact SOT-227B package for space-saving designs
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 10mΩ
Continuous drain current (Id): 180A
Input capacitance (Ciss): 22,000pF
Power dissipation (Tc): 700W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-reliability standards
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Electric vehicles
Renewable energy systems
Industrial automation
Product Lifecycle
This product is currently in active production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Exceptional power handling capability
Excellent efficiency and switching performance
Wide operating temperature range
Compact and space-saving package
Suitable for a broad range of high-power applications
