Manufacturer Part Number
IXFN180N07
Manufacturer
IXYS Corporation
Introduction
The IXFN180N07 is a high-performance N-channel MOSFET transistor from IXYS Corporation, designed for a wide range of power electronics applications.
Product Features and Performance
N-channel MOSFET with low on-resistance of 7mOhm @ 500mA, 10V
Supports continuous drain current of 180A at 25°C
Wide operating temperature range of -55°C to 150°C
High input capacitance of 9000pF at 25V
Maximum power dissipation of 520W at Tc
Product Advantages
Excellent efficiency and low switching losses
High current handling capability
Robust design for reliable operation
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 70V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7mOhm @ 500mA, 10V
Threshold Voltage (Vgs(th)): 4V @ 8mA
Input Capacitance (Ciss): 9000pF @ 25V
Gate Charge (Qg): 480nC @ 10V
Quality and Safety Features
High reliability and rugged design
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Power conversion
Motor drives
Inverters
Switching power supplies
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for improved efficiency
Wide operating temperature range
Robust and reliable design
Suitable for a wide range of power conversion applications
