Manufacturer Part Number
IXFN20N120
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with high voltage and high current handling capabilities
Product Features and Performance
High drain-source voltage rating of 1200V
Continuous drain current of 20A at 25°C case temperature
Low on-resistance of 750mΩ at 500mA, 10V
Wide operating temperature range of -55°C to 150°C
High power dissipation of 780W at 25°C case temperature
Fast switching with low gate charge of 160nC at 10V
Product Advantages
Ideal for high-voltage, high-current switching applications
Excellent thermal performance and power handling
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 750mΩ @ 500mA, 10V
Continuous Drain Current (Id): 20A @ 25°C case temperature
Input Capacitance (Ciss): 7400pF @ 25V
Power Dissipation (Ptot): 780W @ 25°C case temperature
Quality and Safety Features
ROHS3 compliant
Meets industrial safety and reliability standards
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial equipment
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent performance and reliability for high-voltage, high-current applications
Robust design and thermal management capabilities
Proven track record in industrial and power electronics applications
Compatibility with a wide range of system requirements
