Manufacturer Part Number
IXFN210N30X3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and high current handling capability.
Product Features and Performance
Extremely low on-resistance of 4.6 mΩ @ 105 A, 10 V
High continuous drain current of 210 A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low gate charge of 375 nC @ 10 V
High drain-source voltage rating of 300 V
Product Advantages
Excellent thermal performance and power handling
Efficient power conversion and low switching losses
Suitable for high-power, high-frequency applications
Compact and robust SOT-227B package
Key Technical Parameters
Drain-Source Voltage (Vdss): 300 V
Gate-Source Voltage (Vgs): ±20 V
Drain Current (Id): 210 A
On-Resistance (Rds(on)): 4.6 mΩ
Input Capacitance (Ciss): 24,200 pF
Power Dissipation (Tc): 695 W
Quality and Safety Features
RoHS3 compliant
Reliable and durable performance
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters.
Application Areas
High-power, high-frequency switching applications
Industrial motor drives
Power supplies
Inverters and converters
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Extremely low on-resistance and high current handling capability for efficient power conversion
Wide operating temperature range and excellent thermal performance for reliable operation in demanding environments
Low gate charge and fast switching characteristics for high-frequency, high-efficiency applications
Compact and robust SOT-227B package for easy integration into power electronics systems
RoHS3 compliance for environmentally-friendly applications
