Manufacturer Part Number
IXFN24N100
Manufacturer
IXYS Corporation
Introduction
This IXFN24N100 product is a high-performance N-channel MOSFET transistor from IXYS Corporation.
Product Features and Performance
Drain to Source Voltage (Vdss) of 1000 V
Gate-Source Voltage (Vgs) up to ±20 V
On-State Resistance (Rds(on)) as low as 390 mΩ @ 12 A, 10 V
Continuous Drain Current (Id) of 24 A at 25°C
Input Capacitance (Ciss) of 8700 pF @ 25 V
Power Dissipation up to 568 W at Tc
Product Advantages
High voltage capability
Low on-state resistance for efficient power switching
High current handling capacity
Suitable for various high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 5.5 V @ 8 mA
Drive Voltage: 10 V
Gate Charge (Qg): 267 nC @ 10 V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
SOT-227B package for chassis mount
Compatibility
Mounting Type: Chassis Mount
Package: SOT-227-4, miniBLOC
Application Areas
Suitable for high-power switching applications, such as power supplies, motor drives, and industrial electronics
Product Lifecycle
This product is an active and available part from IXYS Corporation.
Key Reasons to Choose This Product
High voltage capability up to 1000 V
Excellent low on-state resistance for efficient power switching
High current handling capacity of 24 A
Reliable performance in a wide temperature range of -55°C to 150°C
RoHS3 compliance for environmental safety
