Manufacturer Part Number
IXFN26N100P
Manufacturer
IXYS Corporation
Introduction
The IXFN26N100P is a high-performance N-channel MOSFET transistor from IXYS Corporation, designed for power switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 1000V
Continuous Drain Current (Id) of 23A at 25°C
On-State Resistance (Rds(on)) of 390mΩ at 13A, 10V
Input Capacitance (Ciss) of 11900pF at 25V
Power Dissipation (Pd) of 595W at Tc
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Suitable for high-power applications
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 390mΩ @ 13A, 10V
Threshold Voltage (Vgs(th)): 6.5V @ 1mA
Input Capacitance (Ciss): 11900pF @ 25V
Power Dissipation (Pd): 595W @ Tc
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design
Compatibility
Suitable for power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Robust and reliable design
Wide operating temperature range
Suitable for a variety of high-power applications
