Manufacturer Part Number
IXFN26N120P
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically a transistor in the FET (Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 1200V
Maximum Gate-to-Source Voltage (Vgs) of ±30V
On-State Resistance (Rds(on)) of 460mΩ @ 13A, 10V
Continuous Drain Current (Id) of 23A at 25°C (Tc)
Input Capacitance (Ciss) of 14000pF @ 25V
Maximum Power Dissipation of 695W at Tc
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for high-power, high-frequency applications
Key Technical Parameters
MOSFET Technology
SOT-227B Chassis Mount Packaging
Operating Temperature Range: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
This MOSFET is part of the HiPerFET and Polar series and is designed for use in a variety of high-power, high-frequency applications.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Welding equipment
Industrial and medical equipment
Product Lifecycle
The IXFN26N120P is an active product, and IXYS Corporation continues to manufacture and support this model. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-state resistance for efficient power conversion
Reliable and durable construction for long-term use
Compatibility with a wide range of high-power, high-frequency applications
Ongoing manufacturer support and potential for future replacements or upgrades