Manufacturer Part Number
IXFN27N80Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
800V Drain-to-Source Voltage
27A Continuous Drain Current
320mΩ On-Resistance
Low Gate Charge
Wide Operating Temperature Range (-55°C to 150°C)
Suitable for high-voltage, high-current switching applications
Product Advantages
Excellent power handling capability
Low conduction losses
High reliability and robustness
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 320mΩ @ 500mA, 10V
Continuous Drain Current (Id): 27A @ 25°C
Input Capacitance (Ciss): 7600pF @ 25V
Power Dissipation (Tc): 520W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-current applications
Stringent quality control and reliability testing
Compatibility
Chassis mount package (SOT-227B)
Suitable for various high-power, high-voltage switching applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial control systems
Renewable energy systems
Welding equipment
Product Lifecycle
Current production model
No discontinuation or replacement expected in the near future
Key Reasons to Choose This Product
Excellent power handling and efficiency
High reliability and robustness
Wide operating temperature range
Compatibility with high-voltage, high-current applications
Cost-effective solution for high-performance power electronics
