Manufacturer Part Number
IXFN27N80
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Part of the HiPerFET series
Product Features and Performance
Drain to Source Voltage (Vdss) of 800V
Vgs (Max) of ±20V
On-state resistance (Rds On) of 300mOhm @ 13.5A, 10V
Continuous Drain Current (Id) of 27A @ 25°C (Tc)
Input Capacitance (Ciss) of 9740 pF @ 25V
Power Dissipation (Max) of 520W @ 25°C (Tc)
Fast switching and low gate charge of 400 nC @ 10V
Product Advantages
Excellent high-voltage and high-current handling capabilities
Low on-state resistance for high efficiency
Fast switching performance
Reliable and robust design
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) (Max) of 4.5V @ 8mA
Drive Voltage (Max Rds On, Min Rds On) of 10V, 15V
Operating Temperature Range of -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Housed in SOT-227B package
Compatibility
Suitable for a variety of high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Welding equipment
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Industry-leading high-voltage and high-current handling capabilities
Excellent efficiency due to low on-state resistance
Fast switching performance for high-frequency applications
Robust and reliable design for demanding industrial environments
Comprehensive product support and availability from IXYS Corporation
