Manufacturer Part Number
IXFN30N120P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor for power electronics and industrial applications.
Product Features and Performance
High voltage rating of 1200V
Low on-resistance of 350mOhm
Continuous drain current of 30A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 310nC at 10V
Product Advantages
Excellent efficiency and low power loss
Reliable high-voltage operation
Robust thermal management
Suitable for high-power, high-frequency switching circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 350mOhm
Drain Current (Id): 30A
Input Capacitance (Ciss): 19000pF
Power Dissipation (Tc): 890W
Quality and Safety Features
RoHS3 compliant
Designed for safety and reliability in industrial applications
Compatibility
SOT-227B package
Suitable for various power electronics and motor control circuits
Application Areas
Power supplies
Motor drives
Inverters and converters
Industrial automation and control systems
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable high-voltage operation
Robust thermal management for demanding applications
Suitable for a wide range of power electronics and industrial control systems
