Manufacturer Part Number
IXFN32N120P
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance N-channel MOSFET transistor with a maximum drain-to-source voltage of 1200V and a continuous drain current of 32A at 25°C case temperature.
Product Features and Performance
N-channel MOSFET design
High drain-to-source voltage rating of 1200V
Continuous drain current of 32A at 25°C case temperature
Low on-resistance (RDS(on)) of 310mΩ at 500mA, 10V
High input capacitance (Ciss) of 21,000pF at 25V
Maximum power dissipation of 1000W at case temperature
Product Advantages
Excellent high-voltage and high-current performance
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 1200V
Gate-to-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 310mΩ @ 500mA, 10V
Continuous Drain Current (ID): 32A @ 25°C
Input Capacitance (Ciss): 21,000pF @ 25V
Power Dissipation (Pd): 1000W @ Tc
Quality and Safety Features
RoHS3 compliant
SOT-227B package for chassis mount
Compatibility
This MOSFET is compatible with a wide range of high-power electronic circuits and systems.
Application Areas
Power inverters and converters
Motor drives
Welding equipment
High-voltage power supplies
Industrial and medical equipment
Product Lifecycle
This MOSFET is an active and widely used product in the IXYS Corporation portfolio. Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Exceptional high-voltage and high-current performance
Low on-resistance for efficient power conversion
Robust and reliable SOT-227B package
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental considerations
