Manufacturer Part Number
IXFN360N15T2
Manufacturer
IXYS Corporation
Introduction
High-power, low on-resistance N-channel MOSFET in a SOT-227B package.
Product Features and Performance
Trench MOSFET technology for low on-resistance
Continuous drain current up to 310A at 25°C case temperature
Drain-to-source voltage up to 150V
On-resistance as low as 4mOhm at 60A, 10V
Input capacitance up to 47,500pF at 25V
Power dissipation up to 1070W at 25°C case temperature
Product Advantages
Excellent efficiency and thermal performance
Compact SOT-227B package for space-saving designs
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
N-channel MOSFET
Drain-to-source voltage (Vdss): 150V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4mOhm @ 60A, 10V
Continuous drain current (Id): 310A @ 25°C case temperature
Input capacitance (Ciss): 47,500pF @ 25V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C (junction temperature)
Compatibility
Suitable for use in various power electronics applications, such as motor drives, power supplies, and inverters.
Application Areas
High-power, high-frequency switching applications
Industrial motor drives
Power supplies
Inverters
Solar energy systems
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Compact SOT-227B package for space-saving designs
Suitable for high-current, high-frequency switching applications
Low on-resistance and high current handling capability
Wide operating temperature range
RoHS3 compliance for environmental considerations
