Manufacturer Part Number
IXFN32N60
Manufacturer
IXYS Corporation
Introduction
This is a high-performance N-Channel power MOSFET from IXYS Corporation. It belongs to the HiPerFET series and is designed for a variety of power electronics applications.
Product Features and Performance
Very low on-resistance of 250 mOhm maximum at 500 mA, 10V gate-source voltage
High drain-to-source voltage rating of 600V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 32A at 25°C case temperature
Low input capacitance of 9000 pF maximum at 25V drain-source voltage
Maximum power dissipation of 520W at 25°C case temperature
Product Advantages
Excellent power handling capability
High efficiency due to low on-resistance
Reliable operation over a wide temperature range
Compact SOT-227B package for efficient heat dissipation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 32A continuous at 25°C
On-Resistance (Rds(on)): 250 mOhm maximum at 500 mA, 10V
Input Capacitance (Ciss): 9000 pF maximum at 25V
Gate Charge (Qg): 325 nC maximum at 10V
Quality and Safety Features
RoHS3 compliant
Housed in a robust SOT-227B package
Compatibility
This MOSFET is a direct replacement for a variety of power electronics applications, including motor drives, power supplies, and industrial controls.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial automation
Renewable energy systems
Product Lifecycle
This MOSFET is an active product and is not nearing discontinuation. Replacement and upgrade options are available from IXYS.
Key Reasons to Choose This Product
Excellent power handling capability and efficiency due to low on-resistance
Wide operating temperature range for reliable performance
Compact and robust package design for efficient heat dissipation
Direct replacement options available for easy integration
Supported by a reputable manufacturer, IXYS Corporation
