Manufacturer Part Number
IXFN36N100
Manufacturer
IXYS Corporation
Introduction
High-power N-Channel MOSFET transistor with high voltage and high current ratings.
Product Features and Performance
1000V drain-source voltage (Vdss)
36A continuous drain current (Id)
240mΩ maximum on-resistance (Rds(on))
Low input capacitance (Ciss) of 9200pF
700W maximum power dissipation (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Low conduction losses
Compact SOT-227B package
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 240mΩ @ 500mA, 10V
Continuous Drain Current (Id): 36A (Tc)
Input Capacitance (Ciss): 9200pF @ 25V
Power Dissipation (Tc): 700W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Fits in SOT-227B package
Can be used in place of similar high-power MOSFET transistors
Application Areas
High-power switching applications
Motor drives
Power supplies
Inverters
Welding equipment
Product Lifecycle
Current product, no plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent power handling capability
Low conduction losses for high efficiency
Compact and robust SOT-227B package
Wide operating temperature range
Suitable for high-reliability and high-power applications
