Manufacturer Part Number
IXFN38N100P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET for power switching applications
Product Features and Performance
Very low on-resistance (RDS(on))
High voltage rating (1000V)
High continuous drain current (38A)
Low gate charge and input capacitance
Suitable for high frequency, high power switching applications
Product Advantages
Excellent performance-to-cost ratio
High efficiency
Reliable and rugged design
Key Technical Parameters
Drain-Source Voltage (VDS): 1000V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 210mΩ @ 19A, 10V
Continuous Drain Current (ID): 38A @ 25°C
Input Capacitance (Ciss): 24,000pF @ 25V
Power Dissipation (Pd): 1000W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Suitable for a wide range of power electronics and power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades available within the IXYS HiPerFET series
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and reliability
Suitable for high-power, high-frequency switching applications
Robust design and wide operating temperature range
Part of a well-established and reliable MOSFET series from IXYS
