Manufacturer Part Number
IXFN38N80Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Part of the HiPerFET, Q2 Class series
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Gate-Source Voltage (Vgs) (Max): ±30 V
On-State Resistance (Rds(on)) (Max): 220 mΩ @ 500 mA, 10 V
Continuous Drain Current (Id) @ 25°C: 38 A (Tc)
Input Capacitance (Ciss) (Max): 8340 pF @ 25 V
Power Dissipation (Max): 735 W (Tc)
Gate Charge (Qg) (Max): 190 nC @ 10 V
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for various power electronics applications
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel FET type
Vgs(th) (Max): 4.5 V @ 8 mA
Drive Voltage (Max Rds On, Min Rds On): 10 V
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Chassis mount package (SOT-227B)
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power electronics applications
Low on-state resistance for efficient power conversion and reduced power losses
Robust and reliable performance across a wide temperature range
RoHS3 compliance for environmentally-conscious design
Compatibility with a variety of power electronics applications