Manufacturer Part Number
IXFN420N10T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET in a SOT-227B package
Product Features and Performance
High drain current capability up to 420A
Low on-resistance down to 2.3mΩ
Fast switching performance
Wide operating temperature range of -55°C to 175°C
High power dissipation up to 1070W
Product Advantages
Excellent thermal management with SOT-227B package
Reliable and robust design
Suitable for high-current, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs) (Max): ±20V
On-Resistance (Rds(on)): 2.3mΩ @ 60A, 10V
Input Capacitance (Ciss): 47,000pF @ 25V
Gate Charge (Qg): 670nC @ 10V
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for improved performance
Compatibility
Suitable for a wide range of high-current, high-power applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional current handling capability up to 420A
Extremely low on-resistance for high efficiency
Reliable and robust design for demanding applications
Wide operating temperature range for versatile use
Excellent thermal management with SOT-227B package
