Manufacturer Part Number
IXFN40N90P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high voltage rating
Product Features and Performance
Drain-source voltage up to 900V
Very low on-resistance of 210mΩ @ 20A, 10V
Continuous drain current of 33A at 25°C
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 695W
Fast switching characteristics with low gate charge of 230nC @ 10V
Product Advantages
Excellent performance for high-voltage, high-power applications
Compact SOT-227B package with chassis mount design
Robust and reliable construction
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 210mΩ @ 20A, 10V
Continuous Drain Current (Id): 33A @ 25°C
Input Capacitance (Ciss): 14000pF @ 25V
Power Dissipation (Ptot): 695W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial power electronics
Inverters
Welding equipment
Medical equipment
Product Lifecycle
This product is currently in production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance characteristics for high-voltage, high-power applications
Compact and robust SOT-227B package design
Reliable and durable construction
Wide operating temperature range
Suitable for a variety of industrial and power electronics applications
