Manufacturer Part Number
IXFN23N100
Manufacturer
IXYS Corporation
Introduction
The IXFN23N100 is a high-voltage, high-power N-channel MOSFET transistor designed for various industrial and power electronics applications.
Product Features and Performance
High drain-to-source voltage rating of 1000V
Continuous drain current of 23A at 25°C baseplate temperature
Maximum power dissipation of 600W at 25°C baseplate temperature
Wide operating temperature range of -55°C to 150°C
Low on-resistance for high efficiency
Robust and reliable MOSFET technology
Product Advantages
Excellent power handling capabilities
High voltage and current ratings
Efficient power switching performance
Suitable for high-power applications
Reliable and durable construction
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 23A (continuous) at 25°C
Power Dissipation (Pd): 600W at 25°C baseplate temperature
Threshold Voltage (Vgs(th)): 5V at 8mA drain current
On-State Resistance (Rds(on)): Dependent on gate drive voltage
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Robust construction for reliable operation
Compatibility
The IXFN23N100 is a direct replacement for various high-power MOSFET transistors in industrial and power electronics applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Induction heating
High-power switching circuits
Product Lifecycle
The IXFN23N100 is an active and widely used product in the IXYS portfolio.
Replacement or upgrade options may be available from IXYS or other manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power switching performance
Reliable and durable construction
Versatile application range
Availability and support from IXYS Corporation
