Manufacturer Part Number
IXFN210N20P
Manufacturer
IXYS Corporation
Introduction
The IXFN210N20P is a high-performance, N-channel MOSFET from IXYS Corporation, designed for a variety of power electronics applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 200V
Continuous Drain Current (Id) of 188A at 25°C case temperature
On-state Resistance (Rds(on)) of 10.5mΩ at 105A and 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 18600pF at 25V
High power dissipation capability of 1070W at case temperature
Product Advantages
Excellent power handling and efficiency
Robust design for high-temperature operation
Low conduction losses for improved system performance
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 10.5mΩ @ 105A, 10V
Continuous Drain Current (Id): 188A at 25°C case temperature
Input Capacitance (Ciss): 18600pF at 25V
Power Dissipation (Tc): 1070W
Quality and Safety Features
RoHS3 compliant
Housed in a SOT-227B package for Chassis Mount
Compatibility
Compatible with a variety of power electronics applications
Application Areas
Inverters
Converters
Motor Drives
Power Supplies
Industrial Equipment
Renewable Energy Systems
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust design for high-temperature operation
Low conduction losses for improved system performance
Wide range of applications in power electronics
Reliable and RoHS3 compliant
