Manufacturer Part Number
IXFN21N100Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage of 1000 V
Low on-resistance of 500 mΩ at 500 mA, 10 V
High continuous drain current of 21 A at 25°C
High input capacitance of 5900 pF at 25 V
High power dissipation of 520 W at Tc
Product Advantages
Excellent high-voltage and high-current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for diverse applications
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 500 mΩ @ 500 mA, 10 V
Continuous Drain Current (Id): 21 A @ 25°C
Input Capacitance (Ciss): 5900 pF @ 25 V
Power Dissipation: 520 W @ Tc
Quality and Safety Features
RoHS3 compliant
Housed in a SOT-227B package for chassis mount
Compatibility
Compatible with various power electronics and control applications
Application Areas
Power conversion and control systems
Motor drives
Inverters
Switching power supplies
Industrial and commercial equipment
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from IXYS Corporation
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for diverse applications
Reliable performance in harsh environments
RoHS3 compliant for environmental compliance
Suitable for a wide range of power electronics and control applications
