Manufacturer Part Number
IXFN200N07
Manufacturer
IXYS Corporation
Introduction
This is a high-performance N-Channel MOSFET transistor from the IXYS HiPerFET series.
Product Features and Performance
Supports continuous drain current of up to 200A at 25°C (case temperature)
Features low on-resistance of 6mΩ at 500mA, 10V
Operates across a wide temperature range of -55°C to 150°C (junction temperature)
Offers low input capacitance of 9000pF at 25V
Capable of handling a maximum power dissipation of 520W (at case temperature)
Product Advantages
Excellent performance characteristics for high-current, high-power applications
Efficient heat dissipation with chassis mount package
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 70V
Gate-Source Voltage (Vgs Max): ±20V
Threshold Voltage (Vgs(th) Max): 4V at 8mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg Max): 480nC at 10V
Quality and Safety Features
RoHS3 compliant
Housed in a SOT-227B package
Compatibility
Suitable for a wide range of high-power electronic applications.
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Solar inverters
Other high-power, high-current switching applications
Product Lifecycle
This product is currently in production and there are no plans for discontinuation. Replacements and upgrades may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance characteristics for high-current, high-power applications
Efficient heat dissipation with chassis mount package
Wide operating temperature range
RoHS3 compliance for environmental sustainability
Proven reliability and performance from a reputable manufacturer
