Manufacturer Part Number
IXFN200N10P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
SOT-227B package
HiPerFET, Polar series
Operating Temperature: -55°C to 175°C (TJ)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id) @ 25°C: 200A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Power Dissipation (Max): 680W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 5V @ 8mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Chassis Mount Mounting Type
Product Advantages
High performance
Compact SOT-227B package
Wide operating temperature range
High power handling capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Continuous Drain Current (Id): 200A
On-state Resistance (Rds(on)): 7.5mOhm
Quality and Safety Features
ROHS3 compliant
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Power electronics
Industrial automation
Motor control
Inverters
Converters
Product Lifecycle
No information on discontinuation or replacements
Key Reasons to Choose This Product
High power handling capacity
Compact package
Wide operating temperature range
Low on-state resistance
Suitable for demanding power electronics applications
