Manufacturer Part Number
IXFN170N30P
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
N-channel MOSFET with low on-resistance
High drain-source voltage rating of 300V
Continuous drain current of 138A at 25°C
Low gate charge of 258nC at 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 20,000pF at 25V
Power dissipation capability of 890W at Tc
Product Advantages
Efficient power conversion and control
Robust and reliable operation
Compact and space-saving design
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs max): ±20V
On-Resistance (Rds(on) max): 18mΩ at 85A, 10V
Threshold Voltage (Vgs(th) max): 4.5V at 1mA
Drain Current (Id continuous): 138A at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Rigorous quality control and testing
Compatibility
Designed for use in power electronics applications
Compatible with various control systems and circuits
Application Areas
Motor drives
Power supplies
Inverters
Solar and wind power systems
Industrial equipment
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability
Excellent efficiency and low losses
Reliable and durable performance
Compact and space-saving design
Compatibility with a wide range of applications
