Manufacturer Part Number
IXFN140N30P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability
Product Features and Performance
High voltage rating of 300V drain-to-source
Low on-resistance of 24mΩ @ 70A, 10V
Continuous drain current of 110A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 185nC @ 10V
High power dissipation capability of 700W
Product Advantages
Excellent performance and efficiency in high power applications
Reliable and rugged design for industrial and automotive use
Compact SOT-227B package with chassis mount
Key Technical Parameters
Drain-to-Source Voltage (Vds): 300V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 24mΩ @ 70A, 10V
Continuous Drain Current (Id): 110A @ 25°C
Input Capacitance (Ciss): 14800pF @ 25V
Power Dissipation (Pd): 700W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for industrial and automotive applications
Reliable and rugged construction
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Solar inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is an active and widely used MOSFET
Replacement options and upgrades are available
Key Reasons to Choose This Product
Excellent performance and efficiency in high power applications
Reliable and rugged design for industrial and automotive use
Wide operating temperature range and high power dissipation
Compact and easy to mount SOT-227B package
RoHS3 compliance for environmental friendliness