Manufacturer Part Number
IXFN120N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and fast switching capabilities.
Product Features and Performance
650V drain-to-source voltage rating
Ultra-low on-resistance of 24mΩ @ 54A, 10V
Continuous drain current of 108A @ 25°C (Tc)
High power dissipation of 890W (Tc)
Fast switching with 225nC gate charge at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance for high-power, high-efficiency applications
Compact SOT-227B package with high thermal capability
Reliable and robust design for demanding environments
Key Technical Parameters
Vdss: 650V
Vgs (max): ±30V
Rds(on) (max): 24mΩ @ 54A, 10V
Ciss (max): 15500pF @ 25V
Qg (max): 225nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
Current product offering
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional performance with ultra-low on-resistance
High power handling capability
Fast switching for high-efficiency operation
Reliable and robust design for demanding applications
Compact and thermally capable package