Manufacturer Part Number
IXFN100N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET device
Part of the HiPerFET and Ultra X2 series
Designed for high-power, high-efficiency switching applications
Product Features and Performance
650V drain-to-source voltage rating
30mΩ maximum on-resistance at 50A, 10V gate-to-source voltage
78A continuous drain current at 25°C case temperature
595W maximum power dissipation at 25°C case temperature
Fast switching capability with low gate charge of 183nC at 10V gate-to-source voltage
Product Advantages
Ultra-low on-resistance for high efficiency
High voltage and current handling capability
Excellent switching performance
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 78A at 25°C case temperature
On-Resistance (Rds(on)): 30mΩ at 50A, 10V gate-to-source voltage
Input Capacitance (Ciss): 10800pF at 25V drain-to-source voltage
Gate Charge (Qg): 183nC at 10V gate-to-source voltage
Quality and Safety Features
RoHS3 compliant
Housed in a SOT-227B package for chassis mount applications
Compatibility
Suitable for use in a wide range of high-power, high-efficiency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Other high-power, high-frequency applications
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
High voltage and current handling capability
Excellent switching performance for high-frequency applications
Robust SOT-227B package for reliable operation
RoHS3 compliance for environmental considerations
