Manufacturer Part Number
IXFN100N10S3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET in SOT-227B package
Product Features and Performance
Drain to source voltage (Vdss) of 100V
Gate-to-source voltage (Vgs) up to ±20V
On-state resistance (Rds(on)) as low as 15mΩ @ 500mA, 10V
Continuous drain current (Id) of 100A at 25°C
Input capacitance (Ciss) of 4500pF @ 25V
Power dissipation of 360W at 25°C
Product Advantages
Excellent on-state resistance for low conduction losses
High current handling capability
Suitable for high-frequency, high-power switching applications
Reliable MOSFET technology
Key Technical Parameters
MOSFET technology
N-channel
Vds: 100V
Vgs(max): ±20V
Rds(on)(max): 15mΩ @ 500mA, 10V
Id(max): 100A @ 25°C
Quality and Safety Features
Operating temperature range: -40°C to 150°C
Compliant with RoHS directive
Compatibility
SOT-227B package
Application Areas
High-power switching applications
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent on-state resistance for high efficiency
High current handling capability
Suitable for high-frequency, high-power switching applications
Reliable and rugged MOSFET technology
Wide operating temperature range
