Manufacturer Part Number
IXFN100N25
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET for power applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 250V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 27mΩ @ 500mA, 10V
Continuous drain current (Id): 100A @ 25°C (Tc)
Input capacitance (Ciss): 9100pF @ 25V
Power dissipation (Tc): 600W
Gate charge (Qg): 300nC @ 10V
Product Advantages
High power density
Low on-state resistance
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
MOSFET technology
N-channel
Threshold voltage (Vgs(th)): 4V @ 8mA
Drive voltage: 10V
Quality and Safety Features
Chassis mount package (SOT-227B)
Designed for high-reliability applications
Compatibility
Compatible with a wide range of power electronic systems and circuits
Application Areas
Power supplies
Motor drives
Inverters
Switching power converters
Product Lifecycle
This product is currently in production and widely available
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power handling capability
Excellent thermal performance
Reliable and robust design
Suitable for a wide range of power electronics applications
