Manufacturer Part Number
IXFN100N10S2
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET transistor suitable for various power conversion and control applications.
Product Features and Performance
N-Channel MOSFET with 100V drain-source voltage rating
Very low on-resistance (15mΩ) for high efficiency
High current capability up to 100A continuous (at 25°C)
Wide operating temperature range of -40°C to 150°C
Fast switching capability with low gate charge (180nC)
Optimized for high-frequency, high-efficiency power conversion
Product Advantages
Excellent thermal performance and power dissipation
Robust design for reliable operation
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Max Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 15mΩ @ 500mA, 10V
Continuous Drain Current (Id): 100A (at 25°C)
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Tc): 360W
Quality and Safety Features
Compliance with relevant safety and environmental standards
Robust construction for reliable long-term operation
Compatibility
Compatible with various power electronics and control systems
Application Areas
Switching power supplies
Motor drives
Inverters
Solar and renewable energy systems
Industrial automation and control
Product Lifecycle
This product is currently in production and widely available
Replacements or upgrades may become available in the future as technology evolves
Key Reasons to Choose This Product
Excellent efficiency and power handling capability
Reliable and robust design for demanding applications
Wide operating temperature range and high current capacity
Suitable for high-frequency, high-efficiency power conversion
Proven track record and reputation of the IXYS brand
