Manufacturer Part Number
IXFN100N50Q3
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor transistor in the form of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
Product Features and Performance
N-channel MOSFET
High power handling capability
Low on-resistance
High voltage rating
Wide operating temperature range
Product Advantages
Excellent power handling and efficiency
Reliable and durable performance
Suitable for high power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 500 V
Gate to Source Voltage (Vgs): ±30 V
On-resistance (Rds(on)): 49 mΩ
Continuous Drain Current (Id): 82 A
Input Capacitance (Ciss): 13,800 pF
Power Dissipation: 960 W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide operating temperature range (-55°C to 150°C)
Compatibility
Compatible with various high power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Power conditioning equipment
Product Lifecycle
This product is an active and widely available part from the manufacturer.
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for improved performance
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
Reliable and durable construction for long-term use
