Manufacturer Part Number
IXFN100N20
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
High drain-to-source voltage rating of 200V
Low on-resistance of 23mOhm at 500mA, 10V
Continuous drain current of 100A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 380nC at 10V
Product Advantages
Excellent power handling and efficiency
High reliability and ruggedness
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 23mOhm @ 500mA, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 9000pF @ 25V
Power Dissipation (Pd): 520W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Fits in SOT-227B package
Compatible with various power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial and automotive electronics
Product Lifecycle
Currently available, no indication of pending discontinuation
Replacement parts and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
High reliability and ruggedness
Wide operating temperature range
Fast switching speed and low gate charge
Suitable for a variety of high-power switching applications
