Manufacturer Part Number
IXFN102N30P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET
Designed for high-power, high-frequency switching applications
Product Features and Performance
Extremely low on-resistance (Rds(on))
High avalanche energy rating
Fast switching speed
High power density
Low gate charge
Rugged and reliable operation
Product Advantages
Excellent thermal management
Superior electrical characteristics
Robust and durable design
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mΩ @ 500mA, 10V
Continuous Drain Current (Id): 88A @ 25°C (Tc)
Input Capacitance (Ciss): 7500pF @ 25V
Power Dissipation (Pd): 600W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Designed for safe and efficient operation
Compatibility
Compatible with a wide range of high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production and available for purchase.
No plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Exceptional electrical performance with ultra-low on-resistance
Efficient thermal management for high-power applications
Robust and reliable design for demanding operating conditions
Versatile compatibility with a variety of high-power, high-frequency systems
Continued availability and support from the manufacturer
