Manufacturer Part Number
IXFN100N50P
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET power transistor
Suitable for high-power, high-voltage switching applications
Product Features and Performance
500V drain-to-source voltage rating
90A continuous drain current at 25°C
Low on-resistance of 49mΩ at 50A, 10V
Wide operating temperature range of -55°C to 150°C
High input capacitance of 20,000pF at 25V
Maximum power dissipation of 1040W at Tc
Product Advantages
Excellent switching performance
High power density
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Vdss: 500V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 49mΩ @ 50A, 10V
Id (Tc): 90A
Ciss (Max) @ Vds: 20,000pF @ 25V
Pd (Max): 1040W
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Robust package design (SOT-227B)
Compatibility
Compatible with various high-power, high-voltage circuit designs
Application Areas
Inverters
Converters
Motor drives
Industrial equipment
Renewable energy systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent performance characteristics (high voltage, high current, low on-resistance)
Reliable and robust design for demanding applications
Suitable for a wide range of high-power, high-voltage switching applications
Provides high power density and efficient operation
Supported by a reputable manufacturer with a strong track record
