Manufacturer Part Number
IXFN100N10S1
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance N-channel MOSFET transistor designed for use in power electronics applications.
Product Features and Performance
Operating temperature range of -40°C to 150°C
Drain-to-source voltage (Vdss) of 100V
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 15mΩ at 500mA, 10V
Continuous drain current (Id) of 100A at 25°C
Input capacitance (Ciss) of 4500pF at 25V
Maximum power dissipation of 360W at 25°C
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust design for reliable performance
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) of 4V at 4mA
Gate charge (Qg) of 180nC at 10V
Chassis mount package (SOT-227B)
Quality and Safety Features
Designed and manufactured to high quality standards
Suitable for safety-critical applications
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
Power conversion and control
Motor drives
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Current production model
Replacement or upgrade options available as needed
Key Reasons to Choose This Product
High current and power handling
Excellent efficiency through low on-resistance
Wide operating temperature range
Reliable and robust design
Compatibility with standard gate drive circuits
Suitability for safety-critical applications
