Manufacturer Part Number
IXFN140N20P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Part of the HiPerFET series
Product Features and Performance
High drain-source voltage rating of 200 V
Low on-resistance of 18 mOhm
High continuous drain current of 115 A
Wide operating temperature range of -55°C to 175°C
Fast switching performance
High power dissipation capability of 680 W
Product Advantages
Excellent power handling and efficiency
Suitable for high-power, high-frequency applications
Robust design and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 18 mOhm
Continuous Drain Current (Id): 115 A
Input Capacitance (Ciss): 7500 pF
Gate Charge (Qg): 240 nC
Quality and Safety Features
RoHS3 compliant
Suitable for chassis mount applications
Compatibility
Can be used in a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement planned
Key Reasons to Choose This Product
Excellent power handling and efficiency
Suitable for high-power, high-frequency applications
Robust design and reliable performance
Wide operating temperature range
RoHS3 compliance
