Manufacturer Part Number
IXFN170N25X3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with ultra-low on-resistance and high current capability
Product Features and Performance
Ultra-low on-resistance of 7.4 mΩ at 85 A and 10 V
High continuous drain current of 170 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 13,500 pF at 25 V
High power dissipation of 390 W at case temperature
Product Advantages
Excellent performance for high-power and high-efficiency applications
Robust design with high reliability
Compact and efficient power electronics solutions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 4.5 V at 4 mA
Gate Charge (Qg): 190 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Housed in a rugged SOT-227B package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Industrial automation
Electric vehicles
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Exceptional performance characteristics, including ultra-low on-resistance and high current handling
Robust and reliable design for demanding applications
Efficient power electronics solutions enabled by the compact package and high power density
Broad compatibility and suitability for a wide range of industrial and automotive applications