Manufacturer Part Number
IXFN50N50
Manufacturer
IXYS Corporation
Introduction
The IXFN50N50 is a high-performance N-channel MOSFET transistor from IXYS Corporation's HiPerFET series, designed for efficient power switching and control applications.
Product Features and Performance
500V Drain-Source Voltage (Vdss)
50A Continuous Drain Current (Id) at 25°C
90mΩ Maximum On-Resistance (Rds(on)) at 500mA, 10V
9400pF Maximum Input Capacitance (Ciss) at 25V
600W Maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High efficiency and low power dissipation
Robust design for reliable operation
Suitable for high-voltage, high-current applications
Key Technical Parameters
MOSFET Technology
N-Channel
Vgs(th) (Max) of 4.5V at 8mA
Drive Voltage Range: 10V (Max Rds(on), Min Rds(on))
Gate Charge (Qg) of 330nC at 10V
Quality and Safety Features
RoHS3 Compliant
Chassis Mount Packaging (SOT-227B)
Compatibility
The IXFN50N50 is compatible with various high-power, high-voltage applications, such as power supplies, motor drives, and industrial control systems.
Application Areas
Power electronics
Inverters and converters
Motor control
Industrial automation
Renewable energy systems
Product Lifecycle
The IXFN50N50 is an active product from IXYS Corporation. Replacement or upgrade options may be available for specific applications.
Key Reasons to Choose This Product
High efficiency and low power loss for improved system performance
Robust and reliable design for demanding applications
Versatile compatibility across various power electronics and industrial control systems
Detailed technical parameters and features for precise application matching
RoHS compliance for environmental responsibility