Manufacturer Part Number
IXFN520N075T2
Manufacturer
IXYS Corporation
Introduction
High-performance power MOSFET with trench technology in SOT-227B package.
Product Features and Performance
N-channel MOSFET with trench technology
Very low on-resistance of 1.9 mOhm @ 100A, 10V
Continuous drain current of 480A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
High power dissipation of 940W at Tc
Input capacitance of 41,000 pF
Gate charge of 545 nC at 10V
Product Advantages
Excellent power handling capability
Extremely low on-resistance for high efficiency
Rugged and reliable design for demanding applications
Compact SOT-227B package for efficient board layout
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 5V @ 8mA
Drive Voltage: 10V
Quality and Safety Features
RoHS3 compliant
Meets industrial and automotive quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching converters
Industrial and automotive power electronics
Product Lifecycle
Currently in active production
Replacement or upgrade parts available
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Reliable and rugged design for demanding environments
Compact packaging for space-constrained designs
Compatibility with a broad range of power electronics applications