Manufacturer Part Number
IXFN62N80Q3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high blocking voltage
Product Features and Performance
High blocking voltage of 800V
Low on-resistance of 140mΩ at 31A, 10V
High continuous drain current of 49A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 13,600pF at 25V
High power dissipation of 960W at Tc
Product Advantages
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 140mΩ @ 31A, 10V
Continuous Drain Current (Id): 49A @ 25°C
Input Capacitance (Ciss): 13,600pF @ 25V
Power Dissipation (Pd): 960W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-reliability standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
No plans for discontinuation
Upgrades and replacements may be available in the future
Several Key Reasons to Choose This Product
Excellent efficiency and low power loss
Robust and reliable performance
Wide operating temperature range
High blocking voltage and current capability
Suitable for demanding high-power switching applications
