Manufacturer Part Number
IXFN66N50Q2
Manufacturer
IXYS Corporation
Introduction
The IXFN66N50Q2 is a high-performance N-channel MOSFET transistor designed for power electronics applications.
Product Features and Performance
500V drain-to-source voltage
66A continuous drain current at 25°C case temperature
80mΩ maximum on-resistance at 500mA, 10V
Wide operating temperature range of -55°C to 150°C
Low gate charge of 199nC at 10V
High power dissipation of 735W at 25°C case temperature
Product Advantages
Excellent performance in high-power, high-voltage applications
Low on-resistance for efficient power conversion
Wide operating temperature range for use in demanding environments
Compact SOT-227B package for high-density designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 80mΩ @ 500mA, 10V
Continuous Drain Current (Id): 66A @ 25°C
Input Capacitance (Ciss): 6800pF @ 25V
Power Dissipation (Pd): 735W @ 25°C case temperature
Quality and Safety Features
Robust design for reliable operation
Compliance with relevant safety standards
Compatibility
Compatible with various power electronics applications, such as motor drives, power supplies, and industrial controls.
Application Areas
High-power, high-voltage applications
Motor drives
Power supplies
Industrial controls
Renewable energy systems
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from the manufacturer or other suppliers.
Key Reasons to Choose This Product
Excellent performance in high-power, high-voltage applications
Low on-resistance for efficient power conversion
Wide operating temperature range for use in demanding environments
Compact package for high-density designs
Robust design for reliable operation
Compatibility with a wide range of power electronics applications
