IXFN70N60Q2 - IXYS

Manufacturer Part Number

IXFN70N60Q2

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.

Product Features and Performance

N-Channel MOSFET

Voltage rating of 600V

Maximum gate-source voltage of ±30V

On-state resistance (Rds(on)) of 80mOhm @ 35A, 10V

Continuous drain current of 70A at 25°C case temperature

Input capacitance of 7200pF @ 25V

Power dissipation of 890W at 25°C case temperature

Gate charge of 265nC @ 10V

Product Advantages

High power handling capability

Low on-state resistance

Suitable for high-voltage applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-State Resistance (Rds(on)): 80mOhm

Continuous Drain Current (Id): 70A

Input Capacitance (Ciss): 7200pF

Power Dissipation (Tc): 890W

Gate Charge (Qg): 265nC

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Package: SOT-227-4, miniBLOC

Supplier Device Package: SOT-227B

Application Areas

High-voltage, high-power switching applications

Industrial and power electronics

Product Lifecycle

This product is an active part and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Several Key Reasons to Choose This Product

High power handling capability up to 890W

Low on-state resistance of 80mOhm

Suitable for high-voltage applications up to 600V

Wide operating temperature range of -55°C to 150°C

RoHS3 compliant for environmental safety