Manufacturer Part Number
IXFN64N60P
Manufacturer
IXYS Corporation
Introduction
The IXFN64N60P is a high-performance N-channel MOSFET transistor from IXYS Corporation, designed for a wide range of power electronics and industrial applications.
Product Features and Performance
600V Drain-Source Voltage Rating
Low RDS(on) of 96mΩ @ 500mA, 10V
50A Continuous Drain Current (Tc)
Wide Operating Temperature Range: -55°C to 150°C
Low Input Capacitance of 12,000pF @ 25V
High Power Dissipation Capability of 700W (Tc)
N-Channel MOSFET with SOT-227B Package
Product Advantages
Excellent Power Handling Capability
High Voltage Tolerance
Low On-State Resistance
Wide Operating Temperature Range
Compact SOT-227B Package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (RDS(on)): 96mΩ @ 500mA, 10V
Continuous Drain Current (ID): 50A (Tc)
Input Capacitance (Ciss): 12,000pF @ 25V
Power Dissipation (Ptot): 700W (Tc)
Quality and Safety Features
RoHS3 Compliant
Meets Stringent Safety and Quality Standards
Compatibility
Compatible with a wide range of power electronics and industrial applications
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Controls
Switching Regulators
Appliances
Product Lifecycle
Currently in active production
Replacement parts and upgrades available
Several Key Reasons to Choose This Product
Exceptional power handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range for versatile applications
Compact SOT-227B package for space-constrained designs
Proven reliability and quality backed by IXYS Corporation
