Manufacturer Part Number
IXFN66N85X
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Suitable for high-voltage, high-power applications
Product Features and Performance
Ultra-low on-resistance for high efficiency
Extremely fast switching speed
High voltage rating of 850V
Continuous drain current of 65A at 25°C
Product Advantages
Optimized for high-frequency, high-power switching applications
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (VDS): 850V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 65mΩ @ 33A, 10V
Continuous Drain Current (ID): 65A (at 25°C)
Input Capacitance (Ciss): 8900pF @ 25V
Power Dissipation (Pd): 830W (at Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-55°C to 150°C)
Compatibility
SOT-227B package
Suitable for chassis mount applications
Application Areas
High-power switching applications
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Solar inverters
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from IXYS or other suppliers
Key Reasons to Choose This Product
Excellent efficiency and power density due to ultra-low on-resistance
Fast switching speed for high-frequency applications
Reliable and robust design for harsh environments
Versatile compatibility and wide range of applications
