Manufacturer Part Number
IXFN70N120SK
Manufacturer
IXYS Corporation
Introduction
High-power silicon carbide (SiCFET) MOSFET transistor
Product Features and Performance
Operates at high voltages up to 1200V
Supports high continuous drain current of 68A at 25°C
Low on-resistance of 34mOhm at 50A, 20V
Fast switching speeds with low gate charge of 161nC at 20V
Wide operating temperature range from -40°C to 175°C
Product Advantages
Improved efficiency and reduced power losses compared to silicon-based MOSFETs
Compact SOT-227B package for space-saving designs
Robust SiC technology for high reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): +20V/-5V
On-Resistance (Rds(on)): 34mOhm @ 50A, 20V
Input Capacitance (Ciss): 2790pF @ 1000V
Threshold Voltage (Vgs(th)): 4V @ 15mA
Quality and Safety Features
Compliant with RoHS3 directive
Designed for reliable operation in harsh environments
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Power conversion and control systems
Motor drives
Renewable energy systems
Industrial and transportation applications
Product Lifecycle
Active product, no near-term discontinuation expected
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Efficient SiC technology for improved system performance
High-voltage and high-current handling capabilities
Compact and robust package design
Suitable for a wide range of power electronics applications
Reliable operation in harsh environments
