Manufacturer Part Number
IXFN60N80P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
800V drain-to-source voltage
140mΩ on-resistance at 30A, 10V gate-source voltage
53A continuous drain current at 25°C case temperature
18000pF maximum input capacitance at 25V drain-source voltage
250nC maximum gate charge at 10V gate-source voltage
-55°C to 150°C operating temperature range
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide temperature operating range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 140mΩ @ 30A, 10V
Continuous Drain Current (Id): 53A @ 25°C
Input Capacitance (Ciss): 18000pF @ 25V
Gate Charge (Qg): 250nC @ 10V
Quality and Safety Features
RoHS3 compliant
Housed in SOT-227B package
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
Currently available
No information on planned discontinuation
Key Reasons to Choose This Product
High voltage and current handling
Low on-resistance for efficient power conversion
Wide temperature operating range
RoHS3 compliance for environmental safety
IXFN52N90PIXYS CorporationMOSFET N-CH 900V 43A SOT227