Manufacturer Part Number
IXFN60N60
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high switching speed
Product Features and Performance
High drain-to-source voltage up to 600V
Low on-resistance of 75mΩ @ 500mA, 10V
High continuous drain current of 60A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed with low gate charge of 380nC @ 10V
Suitable for high-power switching applications
Product Advantages
Excellent power handling capability
Efficient power conversion with low conduction losses
Reliable operation across wide temperature range
Compact and robust SOT-227B package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 75mΩ @ 500mA, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 15000pF @ 25V
Power Dissipation (Pd): 700W @ 25°C
Quality and Safety Features
Robust SOT-227B package for reliable performance
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
The IXFN60N60 is a current production device, with no plans for discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling capability with low on-resistance
Fast switching speed and high efficiency for power conversion
Reliable operation across wide temperature range
Compact and robust package suitable for various applications
